Methods for etching an organic anti-reflective coating
US6649532B1 · kind B1 · utility
7Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | May 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention is a process for etching an organic anti-reflective coating on a base of a substrate, the process including steps of: (a) placing the substrate into a processing chamber; (b) introducing into the processing chamber a processing gas including one or more of carbon monoxide (CO), carbon dioxide (CO2), and sulfur oxide (SO2); and (c) forming a plasma from the processing gas to etch the organic anti-reflective coating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.