Unique feature design enabling structural integrity for advanced low K semiconductor chips
US6650010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Feb 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.