Use of RF biased ESC to influence the film properties of Ti and TiN
US6652718B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2002 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jan 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings of 6:1 is disclosed. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with an RF biased electrostatic chuck to modulate the properties of the deposited Ti and TiN layers in the same chamber, without the use of a collimator or a shutter. The resulting Ti and TiN layers are superior in step coverage, grain size, grain orientation, roughness and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.