Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
US6653154B2 · kind B2 · utility
34Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Mar 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This invention pertains to a method of fabricating an MRAM structure. The method includes forming a pinned layer within a protective region defined by sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.