Patent · US Expired

Process for forming deep and shallow insulative regions of an integrated circuit

US6653182B2 · kind B2 · utility

3Cited by

4References

16Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Michel Marty · Buc, FR
Helene Baudry · Grenoble, FR
Francois Leverd · Meylan, FR

Key dates

Filing date	Jul 3, 2001
Grant date	Nov 25, 2003
Priority date	—
Expiry date	Jul 3, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/763
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Prior fabricating the transistors, a phase of forming a deep insulative trench in the substrate is followed by a phase of forming a shallow insulative trench in the substrate and extending the deep trench. The phase of forming the deep trench includes coating the inside walls of the deep trench with an initial oxide layer and filling the deep trench with silicon inside an envelope formed from an insulative material. The phase of forming the shallow trench includes coating the inside walls of the shallow trench with an initial oxide layer and filling the shallow trench with an insulative material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.