Helene Baudry
5Patents
4h-index
4Co-inventors
39Inventor score
Filing activity: Sep 22, 2000 → Mar 13, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6472262B2 | Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor | Electricity | 11 | Expired |
| US6551891B1 | Process for fabricating a self-aligned vertical bipolar transistor | Electricity | 9 | Expired |
| US6744080B2 | Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor | Electricity | 6 | Expired |
| US6436782B2 | Process for fabricating a self-aligned double-polysilicon bipolar transistor | Electricity | 4 | Expired |
| US6653182B2 | Process for forming deep and shallow insulative regions of an integrated circuit | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.