CVD silicon carbide layer as a BARC and hard mask for gate patterning
US6653735B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jul 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A BARC comprising materials having a lower pinhole density than that of silicon oxynitride and materials having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of polysilicon than that of amorphous carbon is employed to reduce deformation of a pattern to be formed in a patternable layer. The patternable layer is formed over a substrate. A multi-layered anti-reflective coating is formed over the patternable layer. A photoresist pattern is formed on the coating. The coating may comprise an amorphous carbon layer formed over the patternable layer and a SiC layer having a lower pinhole density than the pinhole density of SiON formed over the amorphous carbon layer. The coating may also be formed over a polysilicon layer and comprise a thermal expansion buffer layer having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of polysilicon than that of amorphous carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.