Patent · US Expired

Nonvolatile nor semiconductor memory device and method for programming the memory device

US6654281B2 · kind B2 · utility

7Cited by

11References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Georg Georgakos · Fraunberg, DE
Kai Huckels · Wolfsburg, DE
Jakob Kriz · Ochtrup, DE
Christoph Kutter · Munich, DE
Andreas Liebelt · Hersbruck, DE
Christoph Ludwig · Radeberg, DE
Elard Stein Von Kamienski · Dresden, DE
Peter Wawer · Dresden, DE

Key dates

Filing date	Jun 20, 2002
Grant date	Nov 25, 2003
Priority date	—
Expiry date	Jun 20, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10B41/30
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A nonvolatile NOR semiconductor memory device and a method for programming the memory device are described. The memory device has a multiplicity of one-transistor memory cells disposed in a matrix form being driven both via word lines and via bit lines. In this case, each one-transistor memory cell has both a source line and a drain line, as a result of which selective driving of the respective drain and source regions is obtained. In this way, a leakage current in the semiconductor memory device can be optimally reduced with minimal space requirement.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.