Method for storing data in a nonvolatile memory
US6655758B2 · kind B2 · utility
33Cited by
8References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Jan 6, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described herein is a method for storing a datum in a first and a second memory cells of a nonvolatile memory. The storage method envisages programming the first and second memory cells in a differential way, by setting a first threshold voltage in the first memory cell and a second threshold voltage different from the first threshold voltage in the second memory cell, the difference between the threshold voltages of the two memory cells representing a datum stored in the memory cells themselves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.