Marco Poles
11Patents
6h-index
9Co-inventors
51Inventor score
Filing activity: Jun 14, 2001 → Feb 9, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6687167B2 | EEPROM flash memory erasable line by line | Physics | 55 | Expired |
| US6655758B2 | Method for storing data in a nonvolatile memory | Physics | 33 | Expired |
| US6535428B2 | Sensing circuit for memory cells | Physics | 21 | Expired |
| US7504862B2 | Level shifter translator | Electricity | 14 | Expired |
| US6687159B2 | Method of programming a plurality of memory cells connected in parallel, and a programming circuit therefor | Physics | 9 | Expired |
| US6667903B2 | Programming method for a multilevel memory cell | Physics | 6 | Expired |
| US7508716B2 | Sense amplifier for low-supply-voltage nonvolatile memory cells | Physics | 4 | Expired |
| US6897710B2 | Voltage supply distribution architecture for a plurality of memory modules | Physics | 3 | Expired |
| US7843255B2 | Charge pump regulator and circuit structure | Electricity | 2 | Active |
| US7885116B2 | Sense amplifier for low-supply-voltage nonvolatile memory cells | Physics | 1 | Active |
| US7088614B2 | Programming method for a multilevel memory cell | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.