Strained silicon MOSFET having silicon source/drain regions and method for its fabrication

US6657223B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Haihong Wang · Fremont, US
• Qi Xiang · San Jose, US

Key dates

• Filing date: Oct 29, 2002
• Grant date: Dec 2, 2003
• Expiry date: Oct 29, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A strained silicon MOSFET utilizes a strained silicon layer formed on a silicon germanium layer. Strained silicon and silicon germanium are removed at opposing sides of the gate and are replaced by silicon regions. Deep source and drain regions are implanted in the silicon regions, and the depth of the deep source and drain regions does not extend beyond the depth of the silicon regions. By forming the deep source and drain regions in the silicon regions, detrimental effects of the higher dielectric constant and lower band gap of silicon germanium are reduced.