Semiconductor device having multiple transistors sharing a common gate
US6657229B1 · kind B1 · utility
16Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1999 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Aug 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has field shield isolation or trench type isolation between elements which suppresses penetration of field oxide into an element active region of the device. A common gate is located between two MOS transistors, which may be of opposite conductivity type. After gate electrode wiring layers are formed in a field region and an active region to the same level, a pad polysilicon film formed on the entire surface to cover the patterns of these gate electrode wiring layers, which are in separated patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.