Trench MOSFET device with improved on-resistance
US6657254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Nov 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A trench MOSFET device and method of making the same. The trench MOSFET device comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of the first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than the substrate; (c) a trench extending into the epitaxial region from an upper surface of the epitaxial layer; (d) an insulating layer lining at least a portion of the trench; (e) a conductive region within the trench adjacent the insulating layer; (f) a doped region of the first conductivity type formed within the epitaxial layer between a bottom portion of the trench and the substrate, wherein the doped region has a majority carrier concentration that is lower than that of the substrate and higher than that of the epitaxial layer; (g) a body region of a second conductivity type formed within an upper portion of the epitaxial layer and adjacent the trench, wherein the body region extends to a lesser depth from the upper surface of the epitaxial layer than does the trench; and (h) a source region of the first conductivity type formed within an upper portion of the body region and adjacent the trench. T…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.