Redundant interconnect high current bipolar device
US6657280B1 · kind B1 · utility
2Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2000 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Feb 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor having a base contact surrounded by an emitter contact. A plurality of wires extending from the base contact and the emitter contact of the bipolar transistor, wherein the wires of the base contact are stacked higher than the wires of the emitter contact. A device comprising a plurality of these bipolar transistors, wherein at least one side of each emitter contact abuts each adjacent transistor. Increasing the wiring stack of each row of transistors in the device as the distance between the row and the current input increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.