Graded dielectric layer and method for fabrication thereof
US6657284B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2000 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Mar 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Within a method for forming a dielectric layer, there is first provided a substrate. There is then formed over the substrate a dielectric layer, wherein the dielectric layer is formed from a dielectric material comprising silicon, carbon and nitrogen. Preferably, a nitrogen content is graded within a thickness of the dielectric layer to provide an upper lying nitrogen rich contiguous surface layer of the dielectric layer and a lower lying nitrogen poor contiguous layer of the dielectric layer. The method contemplates a microelectronic fabrication having formed therein a dielectric layer formed in accord with the method. The method provides the resulting dielectric layer with a lower dielectric constant and enhanced adhesion properties as a substrate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.