Method and apparatus for detecting necking over field/active transitions
US6657716B1 · kind B1 · utility
7Cited by
6References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Oct 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54453
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and an apparatus for detecting a necking error during semiconductor manufacturing. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Data from a reference library comprising optical data relating to a poly-silicon formation on a semiconductor wafer is accessed. The metrology data is compared to data from the reference library. A fault-detection analysis is performed in response to the comparison of the metrology data and the reference library data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.