Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support
US6660330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2001 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Aug 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.