Method of measuring implant profiles using scatterometric techniques wherein dispersion coefficients are varied based upon depth
US6660543B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Nov 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention is directed to several inventive methods for characterizing implant profiles. In one embodiment, the method comprises providing a semiconducting substrate, forming a first plurality of implant regions in the substrate, and illuminating at least one of the first plurality of implant regions with a light source in a scatterometry tool, wherein the scatterometry tool generates a profile trace corresponding to an implant profile of the illuminated implant region. The method further comprises creating at least one profile trace corresponding,to an anticipated profile of the implant region, wherein, in creating the profile trace, values of at least one of an index of refraction (n) and a dielectric constant (k) are varied, and comparing the generated profile trace to at least one created profile trace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.