Toxic residual gas removal by non-reactive ion sputtering
US6660642B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Jan 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel method to remove residual toxic gases trapped by a polymerizing process by an inert ion sputter is described. A masking layer is formed overlying a semiconductor substrate. An opening is etched through the masking layer into the semiconductor substrate whereby a polymer forms on sidewalls of the opening and whereby residual toxic gas reactants from gases used in the etching step are adsorbed by the polymer. Thereafter, the polymer is sputtered with non-reactive ions whereby the residual toxic gas reactants are desorbed from the polymer to complete removal of residual toxic gas reactants in the fabrication of an integrated circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.