Substrate pump circuit and method for I/O ESD protection
US6661273B1 · kind B1 · utility
22Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Aug 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K5/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A substrate pump circuit and method for I/O ESD protection including NMOS fingers connected to the interconnection between an I/O pad and an internal circuit comprises a MOS device connected to the interconnection between the I/O pad and the internal circuit and the substrate under the control of a switch to turn it on to conduct a pumping current through the substrate resistor when the I/O pad is under ESD stress, so as to pull up the potential of the substrate adjacent to the NMOS fingers, resulting in the reduction of the triggering voltage of the NMOS fingers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.