Patent · US Expired

Configuration and method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory

US6661694B2 · kind B2 · utility

2Cited by

5References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Kund · Bad Aibling, DE
Reinhard Salchner · Haar, DE

Key dates

Filing date	Nov 15, 2001
Grant date	Dec 9, 2003
Priority date	—
Expiry date	Nov 26, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/22
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A configuration and a method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory utilize the imprint effect for increasing the remanent polarization or remanent magnetization of a material having a hysteresis property. The remanent polarization or magnetization is increased by writing a memory content a number of times to the same memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.