Multiple step CMP polishing
US6663472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Feb 22, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B57/02
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An improved chemical mechanical polishing apparatus for planarizing semiconductor surface materials. The single rotating polishing platen with an attached pad of conventional CMP processes is replaced with two controlled independently driven, concentric and coplanar, polishing platens. The two co-planar polishing platens allows for separate adjustable options to the CMP polishing process. The options are provided by having pads of different material compositions and hardness. Moreover, an annular space is provided between the platens to introduce the usage of two slurry formulations, one to each pad, on the same CMP tool. The annular space between platens forming a drain path for catching and containing slurry waste.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.