Patent · US Expired

OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration

US6664010B2 · kind B2 · utility

8Cited by

2References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Marco Ahrens · Hohenlinden, DE
Wilhelm Maurer · Hopewell Junction, US
Juergen Knobloch · Munich, DE
Rainer Zimmermann · Paderborn, DE

Key dates

Filing date	Aug 30, 2001
Grant date	Dec 16, 2003
Priority date	—
Expiry date	Nov 26, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.