Process for forming photoresist pattern by using gas phase amine treatment
US6664031B2 · kind B2 · utility
4Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2001 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Sep 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.