Electroless copper deposition method for preparing copper seed layers
US6664122B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2001 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | May 8, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/89
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a procedure for deposition of a thin and relatively continuous electroless copper film on the substrate of sub-micron integrated circuit features. The electroless copper film is deposited onto a previously deposited PVD copper film, which may be discontinuous. The continuous film formed by electroless deposition allows for sufficient filling of the sub-micron integrated circuit features by electrodeposition. The electroless bath employed to form the continuous electroless copper film may be composed of a reducing agent, a complexing agent, a source of copper ions, a pH adjuster, and optionally one or more surfactants and/or stabilizers. In one example, the reducing agent contains an aldehyde moiety.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.