Eric G. Webb
23Patents
12h-index
32Co-inventors
77Inventor score
Filing activity: Nov 27, 2001 → Jun 4, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6664122B1 | Electroless copper deposition method for preparing copper seed layers | Emerging Cross-Sectional Technologies | 41 | Expired |
| US8158532B2 | Topography reduction and control by selective accelerator removal | Electricity | 30 | Active |
| US7232513B1 | Electroplating bath containing wetting agent for defect reduction | Chemistry; Metallurgy | 27 | Expired |
| US7605082B1 | Capping before barrier-removal IC fabrication method | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7879218B1 | Deposit morphology of electroplated copper | Electricity | 19 | Active |
| US8043958B1 | Capping before barrier-removal IC fabrication method | Emerging Cross-Sectional Technologies | 19 | Active |
| US7442267B1 | Anneal of ruthenium seed layer to improve copper plating | Electricity | 15 | Expired |
| US7972970B2 | Fabrication of semiconductor interconnect structure | Electricity | 15 | Active |
| US7897198B1 | Electroless layer plating process and apparatus | Electricity | 14 | Active |
| US7690324B1 | Small-volume electroless plating cell | Electricity | 13 | Active |
| US7811925B1 | Capping before barrier-removal IC fabrication method | Emerging Cross-Sectional Technologies | 13 | Active |
| US8372757B2 | Wet etching methods for copper removal and planarization in semiconductor processing | Electricity | 12 | Active |
| US8470191B2 | Topography reduction and control by selective accelerator removal | Electricity | 11 | Active |
| US6884335B2 | Electroplating using DC current interruption and variable rotation rate | Emerging Cross-Sectional Technologies | 10 | Expired |
| US8197662B1 | Deposit morphology of electroplated copper | Electricity | 10 | Active |
| US8415261B1 | Capping before barrier-removal IC fabrication method | Emerging Cross-Sectional Technologies | 9 | Active |
| US7341946B2 | Methods for the electrochemical deposition of copper onto a barrier layer of a work piece | Electricity | 9 | Expired |
| US7947163B2 | Photoresist-free metal deposition | Electricity | 8 | Active |
| US9074286B2 | Wet etching methods for copper removal and planarization in semiconductor processing | Electricity | 8 | Active |
| US8481432B2 | Fabrication of semiconductor interconnect structure | Electricity | 4 | Active |
| US9447505B2 | Wet etching methods for copper removal and planarization in semiconductor processing | Electricity | 4 | Active |
| US8257781B1 | Electroless plating-liquid system | Electricity | 3 | Active |
| US8500985B2 | Photoresist-free metal deposition | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.