Method for etching metal layer on a scale of nanometers
US6664123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2001 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Dec 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31747
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for etching a metal layer on a scale of nano meters, includes preparing a substrate on which a metal layer is formed, positioning a micro tip over the metal layer, generating an electron beam from the micro tip by applying a predetermined voltage between the metal layer and the micro tip, and etching the surface of the metal layer into a predetermined pattern with the electron beam. Accordingly, it is possible to form an etched pattern by applying a negative bias to a micro tip without applying a strong mechanical force to the micro tip, and heating/melting the metal layer with the use of an electron beam emitted from the micro tip which is negative-biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.