Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes
US6664154B1 · kind B1 · utility
47Cited by
12References
20Claims
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Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An exemplary embodiment relates to a method of using amorphous carbon in replacement gate integration processes. The method can include depositing an amorphous carbon layer above a substrate, patterning the amorphous carbon layer, depositing a dielectric layer over the patterned amorphous carbon layer, removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer, removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer, and forming a metal gate in the aperture of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.