Method and structure for salicide trench capacitor plate electrode
US6664161B2 · kind B2 · utility
14Cited by
19References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | May 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/37
Abstract
The present invention is a method and structure for fabricating a trench capacitor within a semiconductor substrate having a buried plate electrode formed of metal silicide. A collar is formed in a trench etched into a substrate; a conformal metal film is deposited thereover, and is annealed to form a silicide that is self-aligned to the collar. Silicide will not be formed on the collar, pads and other areas where the silicon is not directly exposed and hence the metal layer can be removed from these areas by selective etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.