Method of making an on-die decoupling capacitor for a semiconductor device
US6664168B1 · kind B1 · utility
9Cited by
3References
3Claims
0Family size
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Key dates
| Filing date | Jul 24, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Jul 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method of making an on-die decoupling capacitor for a semiconductor device is described. That method comprises forming a first barrier layer on a conductive layer. The upper surface of the first barrier layer is modified to enable a dielectric layer with an acceptable nucleation density to be formed on the first barrier layer. A dielectric layer is formed on the first barrier layer, and a second barrier layer is formed on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.