Metal oxynitride capacitor barrier layer

US6664584B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Sam Yang · Boise, US
• Vishnu Kumar Agrawal · Vikasnagar, IN

Key dates

• Filing date: Nov 30, 2001
• Grant date: Dec 16, 2003
• Expiry date: Nov 30, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/696

Abstract

Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.