Defect detection in pellicized reticles via exposure at short wavelengths
US6665065B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2001 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Jun 23, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/95692
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system and method are provided for detecting latent defects in a mask or reticle, which defects may vary as a function of radiation at exposure wavelengths. By way of example, the mask or reticle is inspected, exposed to radiation at a specified wavelength, and then reinspected. A correlation between the inspection results before and after exposure provides an indication of exposure-related defects, which may include defect growth and/or formation of defects caused by the exposure. By way of further illustration, the combination of inspection and exposure of a mask or reticle may be implemented with respect to a pellicized mask or reticle so as to detect additional defects related to use of the pellicle with the mask or reticle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.