Patent · US Expired

Protection of dielectric window in inductively coupled plasma generation

US6666982B2 · kind B2 · utility

28Cited by
2References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 22, 2001
Grant dateDec 23, 2003
Priority date
Expiry dateOct 22, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/321
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely adjacent the window. Where a slotted shield inside of the window protects the window from deposition, but has slots through which some material can pass in a direction toward the window, the insert is placed between the window and the shield. The insert is formed of a material that is compatible with the process being carried out on a semiconductor wafer within the chamber. Where the window and shield are planar, an unprocessed wafer of the same type and material as the wafer being processed is used for the insert.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.