Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same
US6667486B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 16, 2002 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Aug 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3177
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.