Structurally-stabilized capacitors and method of making of same
US6667502B1 · kind B1 · utility
109Cited by
7References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2000 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Feb 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structurally-stable, tall capacitors having unique three-dimensional architectures for semiconductor devices are disclosed. The capacitors include monolithically-fabricated upright microstructures, i.e., those having large height/width (H/W) ratios, which are mechanical reinforcement against shear forces and the like, by a brace layer that transversely extends between lateral sides of at least two of the free-standing microstructures. The brace layer is formed as a microbridge type structure spanning between the upper ends of the two or more microstructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.