Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6667528B2 · kind B2 · utility
69Cited by
12References
43Claims
0Family size
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Key dates
| Filing date | Jan 3, 2002 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Jan 3, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photodetector (and method for producing the same) includes a semiconductor substrate, a buried insulator formed on the substrate, a buried mirror formed on the buried insulator, a semiconductor-on-insulator (SOI) layer formed on the conductor, alternating n-type and p-type doped fingers formed in the semiconductor-on-insulator layer, and a backside contact to one of the p-type doped fingers and the n-type doped fingers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.