Inert atom implantation method for SOI gettering
US6670259B1 · kind B1 · utility
15Cited by
37References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 5, 2002 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Mar 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of manufacturing a silicon-on-insulator substrate, comprising the steps of (1) providing a silicon-on-insulator semiconductor wafer having at least one surface of a silicon film; (2) implanting an inert atom into the at least one surface to form a damaged surface layer including a gettering site on the silicon film and to leave an undamaged region of the silicon film; (3) subjecting the wafer to conditions to getter at least one impurity from the silicon film into the gettering site; and (4) removing the damaged surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.