Thin film magnetic memory device having redundancy repair function
US6671213B2 · kind B2 · utility
15Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Jul 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/789
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Each of program units which is arranged to be adjacent to a memory array, stores redundant information of 1 bit necessary for replacement and repair. Prior to normal data read operation, the redundant information read from the program units is latched in a row select circuit. The row select circuit selectively activates one of word lines corresponding to the normal memory cells and a spare word line in accordance with whether the defective row addresses indicated by the redundant information are matched to an inputted row addresses, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.