Jun Ohtani
24Patents
14h-index
11Co-inventors
74Inventor score
Filing activity: Sep 12, 1994 → Jan 25, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7173857B2 | Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data | Physics | 409 | Expired |
| US6807101B2 | Semiconductor memory device | Physics | 89 | Expired |
| US5521878A | Clock synchronous semiconductor memory device | Physics | 65 | Expired |
| US6421286B1 | Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated therein | Physics | 62 | Expired |
| US5708622A | Clock synchronous semiconductor memory device | Physics | 36 | Expired |
| US5835448A | Clock synchronous semiconductor memory device for determining an operation mode | Physics | 32 | Expired |
| US6856550B2 | Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data | Physics | 27 | Expired |
| US6297997A | Semiconductor device capable of reducing cost of analysis for finding replacement address in memory array | Physics | 27 | Expired |
| US6717844B1 | Semiconductor memory device with latch circuit and two magneto-resistance elements | Physics | 25 | Expired |
| US6130852A | Memory integrated circuit device including a memory having a configuration suitable for mixture with logic | Physics | 24 | Expired |
| US6778432B2 | Thin film magnetic memory device capable of stably writing/reading data and method of fabricating the same | Physics | 16 | Expired |
| US6535993B1 | Testing apparatus for semiconductor memory device | Physics | 16 | Expired |
| US6671213B2 | Thin film magnetic memory device having redundancy repair function | Physics | 15 | Expired |
| US6895537B2 | Semiconductor integrated circuit device including semiconductor memory with tester circuit capable of analyzing redundancy repair | Physics | 15 | Expired |
| US6765832B1 | Semiconductor memory device with word line shift configuration | Physics | 14 | Expired |
| US6625072B2 | Semiconductor integrated circuit device provided with a self-testing circuit for carrying out an analysis for repair by using a redundant memory cell | Physics | 11 | Expired |
| US6584005B1 | Semiconductor memory device preventing erroneous writing in write operation and delay in read operation | Physics | 7 | Expired |
| US6545921B2 | Semiconductor memory device allowing spare memory cell to be tested efficiently | Physics | 6 | Expired |
| US6157973A | Microcomputer having memory and processor formed on the same chip to increase the rate of information transfer | Physics | 6 | Expired |
| US6809969B2 | Non-volatile semiconductor memory device capable of rapid operation | Physics | 2 | Expired |
| US6888775B2 | Semiconductor memory device for improvement of defective data line relief rate | Physics | 2 | Expired |
| US6813188B2 | Non-volatile semiconductor memory device having a memory cell which stably retains information | Physics | 2 | Expired |
| US6891760B2 | Method of erasing information in non-volatile semiconductor memory device | Physics | 2 | Expired |
| US6744672B2 | Non-volatile semiconductor memory device capable of high-speed data reading | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.