Shaping a plasma with a magnetic field to control etch rate uniformity
US6673199B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2001 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | May 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnetic field generator disposed about the chamber has first and second solenoids. A controller is adapted to control a power supply to provide a first current to the first solenoid and a second current to the second solenoid, thereby generating a magnetic field in the process zone of the chamber to controllably shape the plasma in the process zone to reduce etch rate variations across the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.