Method for forming a trench in a semiconductor substrate
US6673693B2 · kind B2 · utility
54Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 27, 2001 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Jul 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a trench in a semiconductor substrate includes configuring a mask on the substrate. The mask has a window in which a substrate surface is uncovered. The substrate is electrochemically etched proceeding from the substrate surface. A porous substrate is formed in a trench-shaped region proceeding from the substrate surface. The trench is formed by removing the porous substrate from the trench-shaped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.