Deuterium passivated semiconductor device having enhanced immunity to hot carrier effects
US6674151B1 · kind B1 · utility
1Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1999 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Aug 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having trap sites passivated with deuterium has enhanced immunity to hot carrier effects. The trap sites which are passivated with deuterium are encapsulated beneath a barrier film and are therefore resistant to having the deuterium diffuse away from the trap sites during subsequent high temperature processing operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.