Single and multilevel rework

US6674168B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Edward C. Cooney, III · Jericho, US
• Robert M. Geffken · Burlington, US
• Vincent J. McGahay · Poughkeepsie, US
• William T. Motsiff · South Burlington, US
• Mark P. Murray · Burlington, US
• Amanda Piper · Wappingers Falls, US
• Anthony K. Stamper · Williston, US
• David C. Thomas · Oklahoma City, US
• Christy S. Tyberg · Mahopac, US
• Elizabeth Webster · South Burlington, US

Key dates

• Filing date: Jan 21, 2003
• Grant date: Jan 6, 2004
• Expiry date: Jan 21, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.