Technique for high efficiency metalorganic chemical vapor deposition
US6676756B1 · kind B1 · utility
4Cited by
17References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 30, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Aug 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.