Methods and compositions for chemical mechanical polishing
US6677239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Sep 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Methods and apparatus are provided for planarizing substrate surfaces with selective removal rates and low dishing. One aspect of the method provides for processing a substrate including providing a substrate to a polishing platen having polishing media disposed thereon, providing an abrasive free polishing composition comprising one or more surfactants to the substrate surface to modify the removal rates of the at least the first dielectric material and the second dielectric material, polishing the substrate surface, and removing the second material at a higher removal rate than the first material from a substrate surface. One aspect of the apparatus provides a system for processing substrates including a platen adapted for polishing the substrate with polishing media and a computer based controller configured to perform one aspect of the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.