Semiconductor device for detecting gate defects
US6677608B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 3, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device for detecting gate defects and the method of using the same to detect gate defects. The semiconductor device is comprised of a semiconductor substrate having an oxide layer on the top, a gate having spacers, formed on the oxide layer and surrounding the semiconductor substrate, wherein the gate is also patterned to divide the semiconductor substrate into two parts not electrically connected, and a conductive layer formed on the semiconductor outside the gate. In addition, the method for using the semiconductor device of the present invention to detect gate defects is comprised of applying a ground voltage and a set voltage respectively to two parts divided by the gate in the semiconductor device, and measuring current between the two parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.