Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
US6680240B1 · kind B1 · utility
118Cited by
17References
8Claims
0Family size
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Key dates
| Filing date | Jun 25, 2002 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Jun 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator (SOI) device with a strained silicon film has a substrate, and a buried oxide layer on the substrate. Silicon islands are formed on the buried oxide layer, the silicon islands being separated from each other by gaps. The buried oxide layers has recesses directly under the gaps. A material fills the recesses and the gaps, this material being different from the material forming the buried oxide layer. The material induces a net amount of strain in the silicon islands, thereby modifying the electrical properties of carriers in the silicon film and improving device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.