Vertical floating gate transistor
US6680508B1 · kind B1 · utility
24Cited by
16References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 28, 2002 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Aug 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6894
Abstract
A floating gate transistor has been described that includes source and drain regions that are fabricated on different horizontal planes. A floating gate and a control gate are fabricated vertically to control current conducted through the transistor. The control gate is coupled to a word line that is formed with the control gates and extends in a common horizontal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.