Inventor · Boise, ID, US

Paul Rudeck

46Patents
14h-index
9Co-inventors
70Inventor score

Filing activity: Mar 28, 1988 → Jun 15, 2006

Most-cited inventions

PatentTitleAreaCited byStatus
US6272047A Flash memory cell Physics 56 Expired
US4893163A Alignment mark system for electron beam/optical mixed lithography Electricity 51 Expired
US6849501B2 Methods for fabricating an improved floating gate memory cell Electricity 49 Expired
US7212435B2 Minimizing adjacent wordline disturb in a memory device Physics 38 Expired
US6384447B2 Flash memory cell for high efficiency programming Physics 36 Expired
US6798699B2 Flash memory device and method of erasing Physics 25 Expired
US6449189B2 Flash memory cell for high efficiency programming Physics 24 Expired
US6680508B1 Vertical floating gate transistor Electricity 24 Expired
US6461915B1 Method and structure for an improved floating gate memory cell Electricity 21 Expired
US6445619B1 Flash memory cell for high efficiency programming Physics 20 Expired
US6657250B1 Vertical flash memory cell with buried source rail Electricity 18 Expired
US6563741B2 Flash memory device and method of erasing Physics 16 Expired
US7272039B2 Minimizing adjacent wordline disturb in a memory device Physics 16 Expired
US6297092A Method and structure for an oxide layer overlaying an oxidation-resistant layer Electricity 15 Expired
US6762093B2 High coupling floating gate transistor Electricity 11 Expired
US6713350B2 Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stack Electricity 11 Expired
US7257024B2 Minimizing adjacent wordline disturb in a memory device Physics 10 Expired
US6916707B2 High coupling floating gate transistor Electricity 8 Expired
US7148547B2 Semiconductor contact device Electricity 7 Expired
US7420240B2 Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stack Electricity 7 Expired
US6881628B2 Vertical flash memory cell with buried source rail Electricity 7 Expired
US7294567B2 Semiconductor contact device and method Electricity 6 Expired
US6774431B2 High coupling floating gate transistor Electricity 5 Expired
US7932557B2 Semiconductor contact device Electricity 5 Active
US7015098B2 Methods and structure for an improved floating gate memory cell Electricity 5 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.