Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory

US6680509B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Yider Wu · Campbell, US
• Jean Y. Yang · Sunnyvale, US
• Mark T. Ramsbey · Sunnyvale, US
• Emmanuel H. Lingunis · San Jose, US
• Yu Sun · Saratoga, US

Key dates

• Filing date: May 30, 2002
• Grant date: Jan 20, 2004
• Expiry date: Nov 3, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/954

Abstract

A method for fabricating a SONOS device having a buried bit-line including the steps of: providing a semiconductor substrate having an ONO structure overlying the semiconductor substrate; forming a nitride barrier layer on the ONO structure to form, a four-layer stack; forming a patterned photoresist layer on the nitride barrier layer; implanting As or P ions through the four-layer stack to form a bit-line buried under the ONO structure; stripping the photoresist layer and cleaning an upper surface of the four-layer stack; and consolidating the four-layer stack by applying an oxidation cycle. The invention further relates to a SONOS-type device including the nitride barrier layer.